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KM736V799 128kx36 synchronous sram - 1 - rev 9.0 november 1999 document title 128kx36-bit synchronous pipelined burst sram revision history remark preliminary preliminary preliminary preliminary preliminary preliminary final final final fianl final final final final final history initial draft change undershoot spec from -3.0v(pulse width 20ns) to -2.0v(pulse width t cyc /2) add overshoot spec 4.6v(pulse width t cyc /2) change v ih max from 5.5v to v dd +0.5v change t cd from 3.2ns to 3.1ns at bin -50. change t oe from 3.2ns to 3.1ns at bin -50. change setup from 1.5ns to 1.4ns at bin -50. change t cyc from 5.5ns to 5.4ns at bin -55. change t cd from 3.5ns to 3.1ns at bin -55. change t oe from 3.5ns to 3.1ns at bin -55. change setup from 1.5ns to 1.4ns at bin -55. add t cyc 175mhz. change i sb2 from 20ma to 30ma. modify dc characteristics( input leakage current test conditions) form v dd =v ss to v dd to max. final release. add t cyc 225mhz. add v ddq supply voltage( 2.5v ) change t cd , t oe from 3.1ns to 2.8ns at bin -44. change t hzc max , t hzoe max from 3.0ns to 2.8ns at bin -44. add t cyc 250mhz. change t ah , t sh , t dh , t wh , t advh , t csh from 0.5ns to 0.4ns at bin -40. 1. change t as , t ss , t ds , t ws , t advs , t css from 1.4ns to 1.2ns at bin -44. 2. change t ah , t sh , t dh , t wh , t advh , t csh from 0.5ns to 0.4ns at bin -44. 3. change t as , t ss , t ds , t ws , t advs , t css from 1.2ns to 0.8ns at bin -40. 4. change t ah , t sh , t dh , t wh , t advh , t csh from 0.4ns to 0.3ns at bin -40. 1. change i sb value from 120ma to 130ma at -57 remove 119bga(7x17 ball grid array package) . draft date april . 14. 1998 april . 20. 1998 may . 23. 1998 may . 25. 1998 may . 30. 1998 june. 08. 1998 june. 15 . 1998 july. 10 . 1998 dec. 02. 1998 mar. 04. 1999 april. 10. 1999 may. 03. 1999 may. 10. 1999 june. 24. 1999 nov. 26. 1999 the attached data sheets are prepared and approved by samsung electronics. samsung electronics co., ltd. reserve the right to c hange the specifications. samsung electronics will evaluate and reply to your requests and questions on the parameters of this device. if you have any ques- tions, please contact the samsung branch office near your office, call or contact headquarters. rev. no 0.0 0.1 0.2 0.3 . 0.4 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 www.datasheet.in
KM736V799 128kx36 synchronous sram - 2 - rev 9.0 november 1999 we c we d 128kx36-bit synchronous pipelined burst sram the KM736V799 is a 4,718,592-bit synchronous static ran- dom access memory designed for high performance second level cache of pentium and power pc based system. it is organized as 128k words of 36bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache ram applica- tions; gw , bw , lbo , zz. write cycles are internally self-timed and synchronous. full bus-width write is done by gw , and each byte write is per- formed by the combination of we x and bw when gw is high. and with cs 1 high, adsp is blocked to control signals. burst cycle can be initiated with either the address status pro- cessor( adsp ) or address status cache controller( adsc ) inputs. subsequent burst addresses are generated internally in the system s burst sequence and are controlled by the burst address advance( adv ) input. lbo pin is dc operated and determines burst sequence(linear or interleaved). zz pin controls power down state and reduces stand-by cur- rent regardless of clk. the KM736V799 is fabricated using samsung s high perfor- mance cmos technology and is available in a 100pin tqfp package. multiple power and ground pins are utilized to mini- mize ground bounce. general description features logic block diagram ? synchronous operation. ? 2 stage pipelined operation with 4 burst. ? on-chip address counter. ? self-timed write cycle. ? on-chip address and control registers. ? v dd = 3.3v +0.165v/-0.165v power supply. ? v ddq supply voltage 3.3v+0.165v/-0.165v for 3.3v i/o or 2.5v+0.4v/-0.125v for 2.5v i/o. ? 5v tolerant inputs except i/o pins. ? byte writable function. ? global write enable controls a full bus-width write. ? power down state via zz signal. ? lbo pin allows a choice of either a interleaved burst or a lin- ear burst. ? three chip enables for simple depth expansion with no data contention ; 2cycle enable, 1cycle disable. ? asynchronous output enable control. ? adsp , adsc , adv burst control pins. ? ttl-level three-state output. ? 100-tqfp-1420a package . clk lbo adv adsc adsp cs 1 cs 2 cs 2 gw bw we a we b oe zz dqa 0 ~ dqd 7 burst control logic burst 128kx36 address control output data-in address counter memory array register register buffer logic c o n t r o l r e g i s t e r c o n t r o l r e g i s t e r a 0 ~a 1 a 0 ~a 1 a 2 ~a 16 a 0 ~a 16 register fast access times parameter symbol -40 -44 -50 -55 -57 unit cycle time t cyc 4.0 4.4 5.0 5.4 5.7 ns clock access time t cd 2.5 2.8 3.1 3.1 3.3 ns output enable access time t oe 2.8 2.8 3.1 3.1 3.3 ns dqpa ~ dqpd www.datasheet.in
KM736V799 128kx36 synchronous sram - 3 - rev 9.0 november 1999 pin configuration (top view) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 pin (20mm x 14mm) dqpc dqc 0 dqc 1 v ddq v ssq dqc 2 dqc 3 dqc 4 dqc 5 v ssq v ddq dqc 6 dqc 7 n.c. v dd n.c. v ss dqd 0 dqd 1 v ddq v ssq dqd 2 dqd 3 dqd 4 dqd 5 v ssq v ddq dqd 6 dqd 7 dqpd 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 dqpb dqb 7 dqb 6 v ddq v ssq dqb 5 dqb 4 dqb 3 dqb 2 v ssq v ddq dqb 1 dqb 0 v ss n.c. v dd zz dqa 7 dqa 6 v ddq v ssq dqa 5 dqa 4 dqa 3 dqa 2 v ssq v ddq dqa 1 dqa 0 dqpa 1 0 0 9 9 9 8 9 7 9 6 9 5 9 4 9 3 9 2 9 1 9 0 8 9 8 8 8 7 8 6 8 5 8 4 8 3 8 2 a 6 a 7 c s 1 c s 2 w e d w e c w e b w e a c s 2 v d d v s s c l k g w b w o e a d s c a d s p a d v a 8 8 1 a 9 5 0 4 9 4 8 4 7 4 6 4 5 4 4 4 3 4 2 4 1 4 0 3 9 3 8 3 7 3 6 3 5 3 4 3 3 3 2 a 1 6 a 1 5 a 1 4 a 1 3 a 1 2 a 1 1 a 1 0 n . c . n . c . v d d v s s n . c . n . c . a 0 a 1 a 2 a 3 a 4 a 5 3 1 l b o pin name symbol pin name tqfp pin no. symbol pin name tqfp pin no. a 0 - a 16 adv adsp adsc clk cs 1 cs 2 cs 2 we x(x=a,b,c,d) oe gw bw zz lbo address inputs burst address advance address status processor address status controller clock chip select chip select chip select byte write inputs output enable global write enable byte write enable power down input burst mode control 32,33,34,35,36,37 44,45,46,47,48,49 50,81,82,99,100 83 84 85 89 98 97 92 93,94,95,96 86 88 87 64 31 v dd v ss n.c. dqa 0 ~a 7 dqb 0 ~b 7 dqc 0 ~c 7 dqd 0 ~d 7 dqpa~p d v ddq v ssq power supply(+3.3v) ground no connect data inputs/outputs output power supply (2.5v or 3.3v) output ground 15,41,65,91 17,40,67,90 14,16,38,39,42,43,66 52,53,56,57,58,59,62,63 68,69,72,73,74,75,78,79 2,3,6,7,8,9,12,13 18,19,22,23,24,25,28,29 51,80,1,30 4,11,20,27,54,61,70,77 5,10,21,26,55,60,71,76 tqfp www.datasheet.in
KM736V799 128kx36 synchronous sram - 4 - rev 9.0 november 1999 function description the KM736V799 is a synchronous sram designed to support the burst address accessing sequence of the p6 and power pc based microprocessor. all inputs (with the exception of oe , lbo and zz) are sampled on rising clock edges. the start and duration of the burst access is controlled by adsc , adsp and adv and chip select pins. the accesses are enabled with the chip select signals and output enabled signals. wait states are inserted into the access with adv . when zz is pulled high, the sram will enter a power down state. at this time, internal state of the sram is preserved. when zz returns to low, the sram normally operates after 2cycles of wake up time. zz pin is pulled down internally. read cycles are initiated with adsp (regardless of we x and adsc )using the new external address clocked into the on-chip address register whenever adsp is sampled low, the chip selects are sampled active, and the output buffer is enabled with oe . in read oper- ation the data of cell array accessed by the current address, registered in the data-out registers by the positive edge of clk, are car- ried to the data-out buffer by the next positive edge of clk. the data, registered in the data-out buffer, are projected to the output pins. adv is ignored on the clock edge that samples adsp asserted, but is sampled on the subsequent clock edges. the address increases internally for the next access of the burst when we x are sampled high and adv is sampled low. and adsp is blocked to control signals by disabling cs 1 . all byte write is done by gw (regaedless of bw and we x.), and each byte write is performed by the combination of bw and we x when gw is high. write cycles are performed by disabling the output buffers with oe and asserting we x. we x are ignored on the clock edge that sam- ples adsp low, but are sampled on the subsequent clock edges. the output buffers are disabled when we x are sampled low(regaedless of oe ). data is clocked into the data input register when we x sampled low. the address increases internally to the next address of burst, if both we x and adv are sampled low. individual byte write cycles are performed by any one or more byte write enable signals( we a, we b, we c or we d) sampled low. the we a control dqa 0 ~ dqa 7 and dqpa, we b controls dqb 0 ~ dqb 7 and dqpb, we c controls dqc 0 ~ dqc 7 and dqpc, and we d control dqd 0 ~ dqd 7 and dqpd. read or write cycle may also be initi- ated with adsc , instead of adsp . the differences between cycles initiated with adsc and adsp as are follows; adsp must be sampled high when adsc is sampled low to initiate a cycle with adsc . we x are sampled on the same clock edge that sampled adsc low(and adsp high). addresses are generated for the burst access as shown below, the starting point of the burst sequence is provided by the externa l address. the burst address counter wraps around to its initial state upon completion. the burst sequence is determined by the st ate of the lbo pin. when this pin is low, linear burst sequence is selected. when this pin is high, interleaved burst sequence is selected. burst sequence table (interleaved burst) lbo pin high case 1 case 2 case 3 case 4 a 1 a 0 a 1 a 0 a 1 a 0 a 1 a 0 first address fourth address 0 0 1 1 0 1 0 1 0 0 1 1 1 0 1 0 1 1 0 0 0 1 0 1 1 1 0 0 1 0 1 0 bq table (linear burst) note : 1. lbo pin must be tied to high or low, and floating state must not be allowed . lbo pin low case 1 case 2 case 3 case 4 a 1 a 0 a 1 a 0 a 1 a 0 a 1 a 0 first address fourth address 0 0 1 1 0 1 0 1 0 1 1 0 1 0 1 0 1 1 0 0 0 1 0 1 1 0 0 1 1 0 1 0 www.datasheet.in
KM736V799 128kx36 synchronous sram - 5 - rev 9.0 november 1999 synchronous truth table notes : 1. x means "don t care". 2. the rising edge of clock is symbolized by - . 3. write = l means write operation in write truth table. write = h means read operation in write truth table. 4. operation finally depends on status of asynchronous input pins(zz and oe ). cs 1 cs 2 cs 2 adsp adsc adv write clk address accessed operation h x x x l x x - n/a not selected l l x l x x x - n/a not selected l x h l x x x - n/a not selected l l x x l x x - n/a not selected l x h x l x x - n/a not selected l h l l x x x - external address begin burst read cycle l h l h l x l - external address begin burst write cycle l h l h l x h - external address begin burst read cycle x x x h h l h - next address continue burst read cycle h x x x h l h - next address continue burst read cycle x x x h h l l - next address continue burst write cycle h x x x h l l - next address continue burst write cycle x x x h h h h - current address suspend burst read cycle h x x x h h h - current address suspend burst read cycle x x x h h h l - current address suspend burst write cycle h x x x h h l - current address suspend burst write cycle write truth table notes : 1. x means "don t care". 2. all inputs in this table must meet setup and hold time around the rising edge of clk( - ). gw bw we a we b we c we d operation h h x x x x read h l h h h h read h l l h h h write byte a h l h l h h write byte b h l h h l l write byte c and d h l l l l l write all bytes l x x x x x write all bytes asynchronous truth table (see notes 1 and 2) : operation zz oe i/o status sleep mode h x high-z read l l dq l h high-z write l x din, high-z deselected l x high-z truth tables notes 1. x means "don t care". 2. zz pin is pulled down internally 3. for write cycles that following read cycles, the output buffers must be disabled with oe , otherwise data bus contention will occur. 4. sleep mode means power down state of which stand-by current does not depend on cycle time. 5. deselected means power down state of which stand-by current depends on cycle time. www.datasheet.in
KM736V799 128kx36 synchronous sram - 6 - rev 9.0 november 1999 pass-through truth table notes : 1. this operation makes written data immediately available at output during a read cycle preceded by a write cycle.s previous cycle present cycle next cycle operation write operation cs 1 write oe write cycle, all bytes address=an-1, data=dn-1 all l initiate read cycle address=an data=qn-1 for all bytes l h l read cycle data=qn write cycle, all bytes address=an-1, data=dn-1 all l no new cycle data=qn-1 for all bytes h h l no carryover from previous cycle write cycle, all bytes address=an-1, data=dn-1 all l no new cycle data=high-z h h h no carryover from previous cycle write cycle, one byte address=an-1, data=dn-1 one l initiate read cycle address=an data=qn-1 for one byte l h l read cycle data=qn write cycle, one byte address=an-1, data=dn-1 one l no new cycle data=qn-1 for one byte h h l no carryover from previous cycle absolute maximum ratings* *note : stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. parameter symbol rating unit voltage on v dd supply relative to v ss v dd -0.3 to 4.6 v voltage on v ddq supply relative to v ss v ddq v dd v voltage on input pin relative to v ss v in -0.3 to 6.0 v voltage on i/o pin relative to v ss v io -0.3 to v ddq +0.5 v power dissipation p d 2.2 w storage temperature t stg -65 to 150 c operating temperature t opr 0 to 70 c storage temperature range under bias t bias -10 to 85 c capacitance* (t a =25 c, f=1mhz) *note : sampled not 100% tested. parameter symbol test condition min max unit input capacitance c in v in =0v - 6 pf output capacitance c out v out =0v - 8 pf operating conditions at 3.3v i/o (0 c t a 70 c) parameter symbol min typ. max unit supply voltage v dd 3.135 3.3 3.465 v v ddq 3.135 3.3 3.465 v ground v ss 0 0 0 v operating conditions at 2.5v i/o (0 c t a 70 c) parameter symbol min typ. max unit supply voltage v dd 3.135 3.3 3.465 v v ddq 2.375 2.5 2.9 v ground v ss 0 0 0 v www.datasheet.in
KM736V799 128kx36 synchronous sram - 7 - rev 9.0 november 1999 dc electrical characteristics (t a =0 to 70 c, v dd =3.3v+0.165v/-0.165v) * v il (min)=-2.0(pulse width t cyc / 2) ** v ih (max)=4.6(pulse width t cyc / 2) ** in case of i/o pins, the max. v ih =v ddq +0.5v parameter symbol test conditions min max unit input leakage current(except zz) i il v dd = max ; v in =v ss to v dd -2 +2 m a output leakage current i ol output disabled, v out =v ss to v ddq -2 +2 m a operating current i cc device selected, i out =0ma, zz v il , all inputs=v il or v ih , cycle time 3 cyc min -40 - 570 ma -44 - 520 -50 - 480 -55 - 450 -57 - 430 standby current i sb device deselected, i out =0ma,zz v il , f=max, all inputs 0.2v or 3 v dd -0.2v -40 - 160 ma -44 - 150 -50 - 140 -55 - 130 -57 - 130 i sb1 device deselected, i out =0ma, zz 0.2v, f = 0, all inputs=fixed (v dd -0.2v or 0.2v) - 30 ma i sb2 device deselected, i out =0ma, zz 3 v dd -0.2v, f=max, all inputs v il or 3 v ih - 30 ma output low voltage(3.3v i/o) v ol i ol = 8.0ma - 0.4 v output high voltage(3.3v i/o) v oh i oh = -4.0ma 2.4 - v output low voltage(2.5v i/o) v ol i ol = 1.0ma - 0.4 v output high voltage(2.5v i/o) v oh i oh = -1.0ma 2.0 - v input low voltage(3.3v i/o) v il -0.5* 0.8 v input high voltage(3.3v i/o) v ih 2.0 v dd +0.5** v input low voltage(2.5v i/o) v il -0.3* 0.7 v input high voltage(2.5v i/o) v ih 1.7 v dd +0.5** v test conditions parameter value input pulse level(for 3.3v i/o) 0 to 3v input pulse level(for 2.5v i/o) 0 to 2.5v input rise and fall time(measured at 0.3v and 2.7v for 3.3v i/o) 1ns input rise and fall time(measured at 0.3v and 2.1v for 2.5v i/o) 1ns input and output timing reference levels for 3.3v i/o 1.5v input and output timing reference levels for 2.5v i/o v ddq /2 output load see fig. 1 (v dd =3.3v+0.165v/-0.165v , v ddq =3.3v+0.165/-0.165v or v dd =3.3v+0.165v/-0.165v , v ddq =2.5v+0.4v/-0.125v, t a =0 to 70 c) www.datasheet.in
KM736V799 128kx36 synchronous sram - 8 - rev 9.0 november 1999 output load(b) (for t lzc , t lzoe , t hzoe & t hzc ) dout 5pf* fig. 1 * including scope and jig capacitance output load(a) dout z0=50 w * capacitive load consists of all components of 30pf* the test environment. rl=50 w 353 w / 1538 w +3.3v for 3.3v i/o 319 w / 1667 w vl=1.5v for 3.3v i/o v ddq /2 for 2.5v i/o /+2.5v for 2.5v i/o ac timing characteristics (t a =0 to 70 c, v dd =3.3v + 0.165v/-0.165v) notes : 1. all address inputs must meet the specified setup and hold times for all rising clock edges whenever adsc and/or adsp is sampled low and cs is sampled low. all other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected. 2. both chip selects must be active whenever adsc or adsp is sampled low in order for the this device to remain enabled. 3. adsc or adsp must not be asserted for at least 2 clock after leaving zz state. parameter symbol -40 -44 -50 -55 -57 unit min max min max min max min max min max cycle time t cyc 4.0 - 4.4 - 5.0 - 5.4 - 5.7 - ns clock access time t cd - 2.5 - 2.8 - 3.1 - 3.1 - 3.3 ns output enable to data valid t oe - 2.8 - 2.8 - 3.1 - 3.1 - 3.3 ns clock high to output low-z t lzc 0 - 0 - 0 - 0 - 0 - ns output hold from clock high t oh 1.0 - 1.0 - 1.0 - 1.0 - 1.3 - ns output enable low to output low-z t lzoe 0 - 0 - 0 - 0 - 0 - ns output enable high to output high-z t hzoe - 2.8 - 2.8 - 3.0 - 3.0 - 3.0 ns clock high to output high-z t hzc 1.0 2.5 1.0 2.8 1.0 3.0 1.0 3.0 1.3 3.0 ns clock high pulse width t ch 1.7 - 2.0 - 2.0 - 2.0 - 2.0 - ns clock low pulse width t cl 1.7 - 2.0 - 2.0 - 2.0 - 2.0 - ns address setup to clock high t as 0.8 - 1.2 - 1.4 - 1.4 - 1.5 - ns address status setup to clock high t ss 0.8 - 1.2 - 1.4 - 1.4 - 1.5 - ns data setup to clock high t ds 0.8 - 1.2 - 1.4 - 1.4 - 1.5 - ns write setup to clock high ( gw , bw , we x ) t ws 0.8 - 1.2 - 1.4 - 1.4 - 1.5 - ns address advance setup to clock high t advs 0.8 - 1.2 - 1.4 - 1.4 - 1.5 - ns chip select setup to clock high t css 0.8 - 1.2 - 1.4 - 1.4 - 1.5 - ns address hold from clock high t ah 0.3 - 0.4 - 0.5 - 0.5 - 0.5 - ns address status hold from clock high t sh 0.3 - 0.4 - 0.5 - 0.5 - 0.5 - ns data hold from clock high t dh 0.3 - 0.4 - 0.5 - 0.5 - 0.5 - ns write hold from clock high ( gw , bw , we x ) t wh 0.3 - 0.4 - 0.5 - 0.5 - 0.5 - ns address advance hold from clock high t advh 0.3 - 0.4 - 0.5 - 0.5 - 0.5 - ns chip select hold from clock high t csh 0.3 - 0.4 - 0.5 - 0.5 - 0.5 - ns zz high to power down t pds 2 - 2 - 2 - 2 - 2 - cycle zz low to power up t pus 2 - 2 - 2 - 2 - 2 - cycle www.datasheet.in
KM736V799 128kx36 synchronous sram - 9 - rev 9.0 november 1999 c l o c k a d s p a d s c a d d r e s s w r i t e c s a d v o e d a t a o u t t i m i n g w a v e f o r m o f r e a d c y c l e n o t e s : w r i t e = l m e a n s g w = l , o r g w = h , b w = l , w e x = l c s = l m e a n s c s 1 = l , c s 2 = h a n d c s 2 = l c s = h m e a n s c s 1 = h , o r c s 1 = l a n d c s 2 = h , o r c s 1 = l , a n d c s 2 = l t c h t c l t s s t s h t s s t s h t a s t a h a 1 a 2 a 3 b u r s t c o n t i n u e d w i t h n e w b a s e a d d r e s s t w s t w h t c s s t c s h t a d v s t a d v h t o e t h z o e t l z o e t c d t o h ( a d v i n s e r t s w a i t s t a t e ) t h z c q 3 - 4 q 3 - 3 q 3 - 2 q 3 - 1 q 2 - 4 q 2 - 3 q 2 - 2 q 2 - 1 q 1 - 1 d o n t c a r e u n d e f i n e d t c y c www.datasheet.in
KM736V799 128kx36 synchronous sram - 10 - rev 9.0 november 1999 t i m i n g w a v e f o r m o f w r t e c y c l e c l o c k a d s p a d s c a d d r e s s w r i t e c s a d v d a t a i n t c h t c l t s s t s h t a s t a h a 1 a 2 a 3 ( a d s c e x t e n d e d b u r s t ) d 2 - 1 d 1 - 1 t c s s t c s h ( a d v s u s p e n d s b u r s t ) d 2 - 2 d 2 - 3 d 2 - 4 d 3 - 1 d 3 - 2 d 3 - 3 d 2 - 2 d 3 - 4 q 0 - 3 q 0 - 4 o e d a t a o u t t s s t s h t w s t w h t a d v s t a d v h t d s t d h t h z o e d o n t c a r e u n d e f i n e d t c y c www.datasheet.in
KM736V799 128kx36 synchronous sram - 11 - rev 9.0 november 1999 t i m i n g w a v e f o r m o f c o m b i n a t i o n r e a d / w r t e c y c l e ( a d s p c o n t r o l l e d , a d s c = h i g h ) c l o c k a d s p a d d r e s s w r i t e c s a d v o e d a t a o u t t c h t c l t d s t d h q 3 - 2 d a t a i n t o e t o h a 1 a 2 a 3 d 2 - 1 q 2 - 1 q 3 - 1 q 3 - 3 t s s t s h t a s t a h t w s t w h t a d v s t a d v h t l z o e t h z o e t c d t h z c q 3 - 4 t l z c q 1 - 1 d o n t c a r e u n d e f i n e d t c y c www.datasheet.in
KM736V799 128kx36 synchronous sram - 12 - rev 9.0 november 1999 t i m i n g w a v e f o r m o f s i n g l e r e a d / w r i t e c y c l e ( a d s c c o n t r o l l e d , a d s p = h i g h ) c l o c k a d s c a d d r e s s w r i t e c s a d v o e d a t a i n t c h t c l t h z o e d 6 - 1 d a t a o u t t w s t w h t c d t o h t o e d 5 - 1 d 7 - 1 t w s t w h t l z o e t d h t d s a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 8 a 9 q 3 - 1 q 1 - 1 q 2 - 1 q 4 - 1 q 7 - 1 q 8 - 1 t c s s t c s h t s s t s h q 9 - 1 d o n t c a r e u n d e f i n e d t c y c www.datasheet.in
KM736V799 128kx36 synchronous sram - 13 - rev 9.0 november 1999 t i m i n g w a v e f o r m o f p o w e r d o w n c y c l e c l o c k a d s p a d d r e s s w r i t e c s a d v d a t a i n t c h t c l d 2 - 2 o e t h z o e d 2 - 1 a 1 t s s t s h d a t a o u t t p u s a d s c z z t a s t a h t c s s t c s h s l e e p s t a t e n o r m a l o p e r a t i o n m o d e z z r e c o v e r y c y c l e a 2 t w s t w h t l z o e q 1 - 1 t o e t h z c t p d s z z s e t u p c y c l e d o n t c a r e u n d e f i n e d t c y c www.datasheet.in
KM736V799 128kx36 synchronous sram - 14 - rev 9.0 november 1999 application information the samsung 128kx36 synchronous pipelined burst sram has two additional chip selects for simple depth expansion. depth expansion this permits easy secondary cache upgrades from 128k depth to 256k depth without extra logic. data address clk ads 64-bits cs 2 cs 2 clk adsc we x oe cs 1 address data adv adsp 128kx36 spb sram (bank 0) cs 2 cs 2 clk adsc we x oe cs 1 address data adv adsp 128kx36 spb sram (bank 1) clk address cache controller a [0:17] a [17] a [0:16] a [17] a [0:16] i/o [0:71] microprocessor clock adsp address data out bank 0 is selected by cs 2 , and bank 1 deselected by cs 2 q1-1 q1-2 q1-4 q1-3 oe data out t ss t sh a1 a2 write cs 1 a n+1 adv (bank 0) (bank 1) q2-2 q2-4 q2-3 t as t ah t ws t wh t advs t advh t oe t lzoe t hzc bank 0 is deselected by cs 2 , and bank 1 selected by cs 2 t css t csh t cd t lzc [0:n] q2-1 interleave read timing (refer to non-interleave write timing for interleave write timing) don t care undefined *notes : n = 14 32k depth 15 64k depth 16 128k depth 17 256k depth ( adsp controlled , adsc =high) www.datasheet.in
KM736V799 128kx36 synchronous sram - 15 - rev 9.0 november 1999 0.10 max 0~8 22.00 0.30 20.00 0.20 16.00 0.30 14.00 0.20 1.40 0.10 1.60 max 0.05 min (0.58) 0.50 0.10 #1 (0.83) 0.50 0.10 100-tqfp-1420a 0.65 0.30 0.10 0.10 max + 0.10 - 0.05 0.127 package dimensions units ; millimeters/inches www.datasheet.in

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